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1

Solid-state decomposition of silicon carbide for growing ultra-thin heteroepitaxial graphite films

A. Charrier, A. Coati, T. Argunova, F. Thibaudau, Y. Garreau, R. Pinchaux, I. Forbeaux, J. Debever, M. Sauvage-simkin, J. Themlin

Journal:

Journal of Applied Physics

Year:

2002

Language:

english

File:

PDF, 553 KB

english, 2002

2

Cage relaxation effects on the local density of states in a C60 derivative

L.-M. Yu, V. Langlais, J. Ghijsen, G. Gensterblum, Liangbing Gan, R.L. Johnson, R. Caudano, I. Forbeaux, J.-M. Themlin, J.M. Debever, Chinhui Huang

Journal:

Chemical Physics Letters

Year:

1996

Language:

english

File:

PDF, 431 KB

english, 1996

3

Solid-state graphitization mechanisms of silicon carbide 6H–SiC polar faces

I Forbeaux, J.-M Themlin, A Charrier, F Thibaudau, J.-M Debever

Journal:

Applied Surface Science

Year:

2000

Language:

english

File:

PDF, 403 KB

english, 2000

4

Electronic structure of α and γ phases of Si(111)–3×3–Sn

A Charrier, J.-M Themlin, F Thibaudau, I Forbeaux, J.-M Debever

Journal:

Applied Surface Science

Year:

2000

Language:

english

File:

PDF, 271 KB

english, 2000

5

Study by HREELS of elementary reactions on graphite surface induced by Ar+ and H+ ion bombardment

Marc Portail, Isabelle Forbeaux, Nicolas Papageorgiou, Marcel Carrère, Denis Roy, Jean-Marc Layet

Journal:

Surface Science

Year:

2000

Language:

english

File:

PDF, 182 KB

english, 2000

6

Graphitization of the 6H–SiC(0 0 0 1) surface studied by HREELS

T. Angot, M. Portail, I. Forbeaux, J.M. Layet

Journal:

Surface Science

Year:

2002

Language:

english

File:

PDF, 97 KB

english, 2002

7

High-temperature graphitization of the 6H-SiC (0001̄) face

I. Forbeaux, J.-M. Themlin, J.-M. Debever

Journal:

Surface Science

Year:

1999

Language:

english

File:

PDF, 362 KB

english, 1999

8

Interface formation through conduction-band electronic structure

Forbeaux, I., Themlin, J.-M., Debever, J.-M.

Journal:

Physical Review B

Year:

1998

Language:

english

File:

PDF, 531 KB

english, 1998

9

Unoccupied surface state on the (√3 × √3) R30° of 6H-SiC(0001)

Themlin, J.-M, Forbeaux, I, Langlais, V, Belkhir, H, Debever, J.-M

Journal:

EPL (Europhysics Letters)

Year:

1997

Language:

english

File:

PDF, 845 KB

english, 1997

10

The -Reconstructed 6H–SiC(0001): A Semiconducting Surface

I. Forbeaux, J. Themlin, V. Langlais, L. M. Yu, H. Belkhir, J. Debever

Year:

1998

Language:

english

File:

PDF, 359 KB

english, 1998

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